Mobile Menu Will Add Here

Nguyễn Chí Thắng

PERSONAL PROFILE

My academic journey and research pursuits have primarily focused on atomic layer deposition (ALD) and area-selective deposition (ASD). These techniques are crucial in meeting the challenges arising from rapid technological advancement and the ongoing miniaturization of devices. I am particularly captivated by the potential of ALD/ASD techniques in the fabrication of 2D, 3D nanostructures, a critical area for advancing integrated systems at the nanoscale. The applications of these technologies are diverse, encompassing various disciplines within the semiconductor industry, sensor development, materials for extreme environments, bio-applications, multifunctional materials, etc.

In addition, I am also very interested in the synthesis of nanomaterials and devices for applications in human life such as: reduced-graphene-oxide (rGO) based materials for oil separation, sensors, radiation dosimeters, catalyst, water treatment, etc.

PROFESSIONAL QUALIFICATION(S)

  • PhD, Incheon National University, Korea.
  •  

EXPERTISES

  • Materials Science
  • Atomic Layer deposition
  • Thermoluminescent dosimeter materials
  • Nanofabrication
  • Semiconductor
  • Graphene-based materials
  •  

AFFILIATION(S)

  • Associate editor of Atomic Layer Deposition International Journal

RESEARCH INTERESTS

Dr. Nguyen focuses on the potential of Atomic Layer Deposition (ALD) and Area-Selective Deposition (ASD) techniques for fabricating 2D and 3D nano structures, which play a crucial role in advancing integrated systems at the nanoscale. These applications encompass semiconductors, sensors, materials for extreme environments, bio-applications,  multifunctional materials, etc. 

Additionally, Dr. Nguyen is deeply interested in synthesizing nano materials and devices for various human-life applications. The reduced-graphene-oxide (rGO)-based materials for oil separation,  sensors, radiation dosimeters, catalysts, water treatment, etc. 

PUBLICATION and PROJECTS

 
  • Publisher Correction: Gradient area-selective deposition for seamless gap-filling in 3D nanostructures through surface chemical reactivity control (Nature Communications, (2022), 13, 1, (7597), 10.1038/s41467-022-35428-6)
  • Area-Selective Deposition of Ruthenium Using Homometallic Precursor Inhibitor
  • Gradient area-selective deposition for seamless gap-filling in 3D nanostructures through surface chemical reactivity control
  • Computational Modeling of Physical Surface Reactions of Precursors in Atomic Layer Deposition by Monte Carlo Simulations on a Home Desktop Computer
  • Elucidating the Reaction Mechanism of Atomic Layer Deposition of Al2O3 with a Series of Al(CH3)xCl3–x and Al(CyH2y+1)3 Precursors
  • Elucidating the Reaction Mechanism of Atomic Layer Deposition of Al2O3 with a Series of Al(CH3)xCl3–x and Al(CyH2y+1)3 Precursors
  • Growth modulation of atomic layer deposition of HfO2 by combinations of H2O and O3 reactants
  • Toward enhanced humidity stability of triboelectric mechanical sensors via atomic layer deposition
  • Atomic Layer Modulation of Multicomponent Thin Films through Combination of Experimental and Theoretical Approaches
  • Promoting lithium electrodeposition towards the bottom of 3-D copper meshes in lithium-based batteries
  • Tunable Color Coating of E-Textiles by Atomic Layer Deposition of Multilayer TiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Films
  • Thermal atomic layer deposition of metallic Ru using H<sub>2</sub>O as a reactant
  • Structure and luminescence properties of $$\hbox {K}_{{2}}\hbox {GdF}_{{5}}$$ K 2 GdF 5 : $$\hbox {Tb}^{3+}$$ Tb 3 + synthesized by solid-state reaction method

  • Colloidal chemical synthesis, structural and luminescent properties of YAl3(BO3)4:Ce3+ phosphors